07.04.2011 LED1050-66-60 1 of 1 LED1050-66-60 technical data high power led array, 60 chips gaas LED1050-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency gaas diode chips, mounted on a metal stem to-66 with ain ceramics and covered with double coated clear silicone and epoxy resin. these devices are designed for high current operation with proper heat sinking to improver thermal conductive efficiency. specifications ? structure: gaas, 60 led chips ? peak wavelength: typ. 1050 nm ? optical output power: typ. 120 mw ? package: to-66 stem with ain, clear silicone and epoxy resin absolute maximum ratings (t c =25c) item symbol value unit power dissipation p d 6.0 w forward current i f 800 ma reverse voltage v r 30 v operating temperature t opr -30 ? +80 c storage temperature t stg -30 ? +110 c soldering temperature * t sol 265 c * must be completed within 3 seconds (unit: mm) electro-optical characteristics item symbol condition min. typ. max. unit total radiated power p o i f = 600 ma - 120 - mw forward voltage v f i f = 600 ma - 7.0 - v reverse voltage v r i r = 10 a 30 - - v peak wavelength p i f = 600 ma 1000 1050 1100 nm half width ? i f = 600 ma - 55 - nm viewing half angle 1/2 i f = 600 ma - 60 - deg. rise time t f i f = 600 ma - 15 - ns fall time t f i f = 600 ma - 10 - ns heat sink is required, thermal resistance <8k/w notes ? this high power led must be cooled! ? do not view directly into the emitting area of the led during operation! ? the above specifications are for reference purpose only and subjected to change without prior notice.
|
